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IPP114N12N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 120 V N-channel, normal level RDS(on)max 11.4 m Excellent gate charge x R product (FOM) DS(on) ID 75 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant; halogen free Qualified according to JEDEC1) for target application Ideal for high-frequency switching and synchronous rectification Type IPP114N12N3 G Package PG-TO220-3 Marking 114N12N Maximum ratings, at T 25 C, unless otherwise specified Maximum ratings, at T =25 C, unless otherwise specified j j Parameter Symbol Conditions Value Unit I T =25 C Continuous drain current 75 A D C T =100 C 53 C I T =25 C 300 Pulsed drain current2) D,pulse C E Avalanche energy, single pulse I =75 A, R =25 120 mJ AS D GS V 20 V Gate source voltage3) GS