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PD - 94653B IRF3205Z AUTOMOTIVE MOSFET IRF3205ZS IRF3205ZL Features HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 6.5m G Description ID = 75A Specifically designed for Automotive applications, S this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on- resistance per silicon area. Additional features of this design are a 175 C junction operating tempera- ture, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety TO-220AB D2Pak TO-262 of other applications. IRF3205Z IRF3205ZS IRF3205ZL Absolute Maximum Rating