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PD - 97034 IRF4905SPbF IRF4905LPbF Features HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = -55V 150 C Operating Temperature Fast Switching RDS(on) = 20m Repetitive Avalanche Allowed up to Tjmax G Some Parameters Are Differrent from ID = -42A IRF4905S S Lead-Free D D Description Features of this design are a 150 C junction oper- ating temperature, fast switching speed and im- S proved repetitive avalanche rating . These features S D D combine to make this design an extremely efficient G G and reliable device for use in a wide variety of other D2Pak TO-262 applications. IRF4905SPbF IRF4905LPbF GDS Gate Drain Source Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25 C Continuous Drain Current, VGS @ 10V (Silicon Limited) -70 ID @ TC = 100 C Continuous Drain Current, VGS @ 10V (Silicon Limited