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PD - 95774B IRLR2905ZPbF IRLU2905ZPbF Features HEXFET Power MOSFET Logic Level D Advanced Process Technology VDSS = 55V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) = 13.5m Fast Switching G Repetitive Avalanche Allowed up to Tjmax Lead-Free ID = 42A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on- resistance per silicon area. Additional features of this design are a 175 C junction operating temperature, fast switching speed and improved repetitive avalanche rating These features combine to make this design an extremely efficient and D-Pak I-Pak reliable device for use in a wide variety of applications. IRLR2905ZPbF IRLU2905ZPbF Absolute Maximum Ratings Parameter Max. Units Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25 C 60 Continuous Drain C