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PD-97768 AUTOMOTIVE GRADE AUIRFBA1405 HEXFET Power MOSFET Features l Advanced Planar Technology D V(BR)DSS 55V l Low On-Resistance RDS(on) typ. 4.3m l Dynamic dv/dt Rating l 175 C Operating Temperature max 5.0m G l Fast Switching ID (Silicon Limited) 174A l Fully Avalanche Rated ID (Package Limited) 95A l Repetitive Avalanche Allowed S up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified* D Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET Power MOSFETs utilizes the latest processing techniques to achieve S D low on-resistance per silicon area. This benefit com- G bined with the fast switching speed and ruggedized Super-220 device design that HEXFET power MOSFETs are well AUIRFBA1405 known for, provides the designer with an extremely efficient and reliable device for use in Autom