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PD - 96420 AUTOMOTIVE GRADE AUIRFP2602 HEXFET Power MOSFET Features Advanced Process Technology D V(BR)DSS 24V Low On-Resistance 175 C Operating Temperature RDS(on) typ. 1.25m Fast Switching max. 1.6m Repetitive Avalanche Allowed up to Tjmax G Lead-Free, RoHS Compliant ID (Silicon Limited) 380A Automotive Qualified * S ID (Package Limited) 180A Description Specifically designed for Automotive applications, D this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on- resistance per silicon area. Additional features of S this design are a 175 C junction operating D G temperature, fast switching speed and improved repetitive avalanche rating . These features combine TO-247AD to make this design an extremely efficient and reliable device for use in Automotive applications GDS and a wide variety