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PD - 97621 AUTOMOTIVE GRADE AUIRFZ34N Features HEXFET Power MOSFET l Advanced Planar Technology l Low On-Resistance D V(BR)DSS 55V l Dynamic dV/dT Rating l 175 C Operating Temperature RDS(on) max. 0.040 G l Fast Switching l Fully Avalanche Rated S ID 29A l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified* D Description S Specifically designed for Automotive applications, D this cellular design of HEXFET Power MOSFETs G utilizes the latest processing techniques to achieve TO-220AB low on-resistance per silicon area. This benefit AUIRFZ34N combined with the fast switching speed and ruggedized device design that HEXFET power GDS MOSFETs are well known for, provides the designer Gate Drain Source with an extremely efficient and reliable device for use in Automotive and a wide variety of other appli