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PD - 96352 AUTOMOTIVE GRADE AUIRL3705N Features HEXFET Power MOSFET Advanced Planar Technology D Logic-Level Gate Drive V(BR)DSS 55V Dynamic dV/dT Rating 175 C Operating Temperature RDS(on) max. 0.01 Fast Switching G Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax ID S 89A Lead-Free, RoHS Compliant Automotive Qualified * D Description S Specifically designed for Automotive applications, this D Cellular design of HEXFET Power MOSFETs utilizes G the latest processing techniques to achieve low on- TO-220AB resistance per silicon area. This benefit combined with the AUIRL3705N fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides GDS the designer with an extremely efficient and reliable Gate Drain Source device for use in Automotive and a wide variety of other applica