Скачать даташит для irf1404lpbf_irf1404spbf:

PD -95104 IRF1404SPbF IRF1404LPbF l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance l Dynamic dv/dt Rating D l 175 C Operating Temperature VDSS = 40V l Fast Switching l Fully Avalanche Rated RDS(on) = 0.004 G l Lead-Free ID = 162A Description S Seventh Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- resistance in any existin