Скачать даташит для irf3710zlpbf_irf3710zpbf_irf3710zspbf:

PD - 95466A IRF3710ZPbF IRF3710ZSPbF Features IRF3710ZLPbF Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature D VDSS = 100V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 18m G Description ID = 59A This HEXFET Power MOSFET utilizes the latest S processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. TO-220AB D2Pak TO-262 IRF3710ZPbF IRF3710ZSPbF IRF3710ZLPbF Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25 C 59 A Continuous Drain Current

Ключевые слова - ALL TRANSISTORS DATASHEET

 irf3710zlpbf irf3710zpbf irf3710zspbf.pdf Проектирование, MOSFET, Мощность

 irf3710zlpbf irf3710zpbf irf3710zspbf.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 irf3710zlpbf irf3710zpbf irf3710zspbf.pdf База данных, Инновации, ИМС, Транзисторы