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PD - 96214 IRFB4110GPbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply VDSS 100V l High Speed Power Switching RDS(on) typ. 3.7m l Hard Switched and High Frequency Circuits max. 4.5m ID (Silicon Limited) 180A ID (Package Limited) 120A Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness D D l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability S l Lead-Free G D G l Halogen-Free TO-220AB IRFB4110GPbF S GDS Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units ID @ TC = 25 C Continuous Drain Current, VGS @ 10V (Silicon Limited) 180 ID @ TC = 100 C Continuous Drain Current, VGS @ 10V (Silicon Limited) 130 A ID @ TC = 25 C Continuous Drain Current, VGS @ 10V (Wire Bond Limited) 120 IDM Pulsed Drain C