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PD - 97078A IRFB4229PbF Features l Advanced Process Technology Key Parameters l Key Parameters Optimized for PDP Sustain, VDS min 250 V Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 300 V l Low EPULSE Rating to Reduce Power RDS(ON) typ. @ 10V m 38 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100 C and Pass Switch Applications 91 A l Low QG for Fast Response TJ max 175 C l High Repetitive Peak Current Capability for Reliable Operation D D l Short Fall & Rise Times for Fast Switching l175 C Operating Junction Temperature for Improved Ruggedness l Repetitive Avalanche Capability for Robustness G S and Reliability D G l Class-D Audio Amplifier 300W-500W S TO-220AB (Half-bridge) GDS Gate Drain Source Description This HEXFET Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch a