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PD - 97106 IRFP4321PbF HEXFET Power MOSFET Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS VDSS 150V l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits 12m RDS(on) typ. Benefits max. 15.5m l Low RDSON Reduces Losses ID 78A l Low Gate Charge Improves the Switching Performance D l Improved Diode Recovery Improves Switching & D EMI Performance l 30V Gate Voltage Rating Improves Robustness l Fully Characterized Avalanche SOA S G D G S TO-247AC GDS Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units ID @ TC = 25 C Continuous Drain Current, VGS @ 10V 78 c A ID @ TC = 100 C Continuous Drain Current, VGS @ 10V 55 IDM Pulsed Drain Current d 330 PD @TC = 25 C Maximum Power Dissipation 310 W Linear Derating Factor 2.0 W/ C VGS Gate-to-Source Voltage 30 V EAS