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PD - 94296A IRFR12N25D SMPS MOSFET IRFU12N25D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 250V 0.26 14A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage D-Pak I-Pak and Current IRFR12N25D IRFU12N25D Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25 C Continuous Drain Current, VGS @ 10V 14 ID @ TC = 100 C Continuous Drain Current, VGS @ 10V 9.7 A IDM Pulsed Drain Current 56 PD @TC = 25 C Power Dissipation 144 W Linear Derating Factor 0.96 W/ C VGS Gate-to-Source Voltage 30 V dv/dt Peak Diode Recovery dv/dt 9.3 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1.6mm from