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IRG7PH35UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features C Low VCE (ON) trench IGBT Technology VCES = 1200V Low Switching Losses Square RBSOA IC = 25A, TC = 100 C Ultra-Low VF Diode 1300Vpk Repetitive Transient Capacity G TJ(max) = 150 C 100% of the Parts Tested for ILM Positive VCE (ON) Temperature Co-Efficient E VCE(on) typ. = 1.9V @ IC = 20A Tight Parameter Distribution n-channel Lead Free Package Benefits C Device optimized for induction heating and soft switching applications High Efficiency due to Low VCE(on), low switching losses and Ultra-low VF E Rugged transient performance for increased reliability C G Excellent current sharing in parallel operation TO-247AD Low EMI GC E Gate Collector Emitter Standard