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PD - 97548 IRG7PSH50UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Square RBSOA I NOMINAL = 50A 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient G TJ(max) = 150 C Ultra fast soft recovery co-pak diode Tight parameter distribution E VCE(on) typ. = 1.7V Lead-Free n-channel Benefits High efficiency in a wide range of applications Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses C Rugged transient performance for increased reliability Excellent current sharing in parallel operation E C G Applications U.P.S. Super-247 Welding Solar Inverter Induction Heating GC E Gate Collector Emitter Absolute Maximum Rati