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PD - 97404 IRGP4063PbF INSULATED GATE BIPOLAR TRANSISTOR IRGP4063-EPbF Features C Low VCE (ON) Trench IGBT Technology VCES = 600V Low switching losses Maximum Junction temperature 175 C IC = 48A, TC = 100 C 5 S short circuit SOA Square RBSOA G tSC 5 s, TJ(max) = 175 C 100% of the parts tested for ILM Positive VCE (ON) Temperature co-efficient E VCE(on) typ. = 1.65V Tight parameter distribution n-channel Lead Free Package Benefits C C High Efficiency in a wide range of applications Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses Rugged transient Performance for increased reliability E E C C G G Excellent Current sharing in parallel operation TO-247AC TO-247AD Low EMI IRGP4063PbF IRGP4063-EPbF G C E Gate Collector Emitter Absolute

Ключевые слова - ALL TRANSISTORS DATASHEET

 irgp4063.pdf Проектирование, MOSFET, Мощность

 irgp4063.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 irgp4063.pdf База данных, Инновации, ИМС, Транзисторы