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IRGP4740DPbF IRGP4740D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 40A, TC =100 C tSC 5.5 s, TJ(max) = 175 C E E G C C G G VCE(ON) typ. = 1.7V @ IC = 24A E IRGP4740DPbF IRGP4740D-EPbF n-channel TO-247AC TO-247AD Applications Industrial Motor Drive G C E UPS Gate Collector Emitter Solar Inverters Welding Features Benefits Low VCE(ON) and Switching Losses High Efficiency in a Wide Range of Applications 5.5 s Short Circuit SOA Rugged Transient Performance Square RBSOA Maximum Junction Temperature 175 C Increased Reliability Positive VCE (ON) Temperature Coefficient Excellent Current Sharing in Parallel Operation Lead-Free, RoHs compliant Environmentally friendly Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRGP474