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PD - 97355B IRGS4062DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL4062DPbF ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 600V Low VCE (ON) Trench IGBT Technology Low switching losses IC = 24A, TC = 100 C Maximum Junction temperature 175 C 5 S short circuit SOA G Square RBSOA tSC 5 s, TJ(max) = 175 C 100% of the parts tested for 4X rated current (ILM) E Positive VCE (ON) Temperature co-efficient VCE(on) typ. = 1.65V Ultra fast soft Recovery Co-Pak Diode n-channel Tight parameter distribution Lead Free Package C C Benefits High Efficiency in a wide range of applications E E C Suitable for a wide range of switching frequencies due to G G Low VCE (ON) and Low Switching losses D2Pak TO-262 Rugged transient Performance for increased reliability IRGS4062DPbF IRGSL4062DPbF Excellent Cur