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PD - 94575A IRGB6B60K IRGS6B60K INSULATED GATE BIPOLAR TRANSISTOR IRGSL6B60K C VCES = 600V Features Low VCE (on) Non Punch Through IGBT Technology. 10 s Short Circuit Capability. IC = 7.0A, TC=100 C Square RBSOA. Positive VCE (on) Temperature Coefficient. G tsc > 10 s, TJ=150 C E VCE(on) typ. = 1.8V n-channel Benefits Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Excellent Current Sharing in Parallel Operation. TO-220AB D2Pak TO-262 IRGB6B60K IRGS6B60K IRGSL6B60K Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25 C Continuous Collector Current 13 A IC @ TC = 100 C Continuous Collector Current 7.0 ICM Pulsed Collector Current 26 ILM Clamped Inductive Load Current 26 VGE Gate-to-Emitter Voltage 20 V PD @ TC = 25 C Maximum Power Dis