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Advance Technical Information TrenchT2TM HiperFET VDSS = 150V FMM110-015X2F N-Channel Power ID25 = 53A MOSFET RDS(on) 20m 3 3 T1 trr(typ) = 85ns 5 5 4 4 T2 1 1 Phase Leg Topology ISOPLUS i4-PakTM 2 2 Symbol Test Conditions Maximum Ratings TJ -55 ... +175 C 1 TJM 175 C Isolated Tab Tstg -55 ... +175 C 5 VISOLD 50/60HZ, RMS, t = 1min, Leads-to-Tab 2500 V TL 1.6mm (0.062 in.) from Case for 10s 300 C TSOLD Plastic Body for 10s 260 C Features FC Mounting Force 20..120 / 4.5..27 N/lb. Silicon Chip on Direct-Copper Bond (DCB) Substrate - UL Recognized Package Symbol Test Conditions Maximum Ratings - Isolated Mounting Surface VDSS TJ = 25 C to 175 C 150 V - 2500V Electrical Isolation Avalanche Rated VDGR TJ = 25 C to 175 C, RGS = 1M 150 V Low QG VGSM Transient 30 V Low Drain-to-Tab

 

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 fmm110-015x2f.pdf Проектирование, MOSFET, Мощность

 fmm110-015x2f.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 fmm110-015x2f.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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