Скачать даташит для irfp460:

MegaMOSTM IRFP 460 VDSS = 500 V Power MOSFET ID(cont) = 20 A RDS(on) = 0.27 N-Channel Enhancement Mode, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C20 A G = Gate, D = Drain, IDM TC = 25 C, pulse width limited by TJM 80 A S = Source, TAB = Drain IAR 20 A EAR TC = 25 C28 mJ dv/dt IS IDM, di/dt 100 A/ s, VDD VDSS, 3.5 V/ns TJ 150 C, RG = 2 Features PD TC = 25 C 260 W Repetitive avalanche energy rated TJ -55 ... +150 C Fast switching times Low RDS (on) HDMOSTM process TJM 150 C Rugged polysilicon gate cell structure Tstg -55 ... +150 C High Commutating dv/dt Rating Md Mounting torque 1.15/10 Nm/lb.in. Weight 6 g Applications Maximum lead temper