Скачать даташит для ixfr24n50q_ixfr26n50q:

VDSS ID25 RDS(on) HiPerFETTM Power MOSFETs IXFR 26N50Q 500 V 24 A 0.20 ISOPLUS247TM IXFR 24N50Q 500 V 22 A 0.23 (Electrically Isolated Back Surface) trr 250 ns N-Channel Enhancement Mode High dV/dt, Low t , HDMOSTM Family rr Symbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432 VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGS Continuous 20 V VGSM Transient 30 V G Isolated back surface* D ID25 TC = 25 C 26N50Q 24 A 24N50Q 22 A IDM TC = 25 C, Pulse width limited by TJM 26N50Q 104 A G = Gate D = Drain 24N50Q 96 A S = Source IAR TC = 25 C 26N50Q 26 A 24N50Q 24 A * Patent pending EAR TC = 25 C30 mJ EAS TC = 25 C 1.5 J Features dv/dt IS IDM, di/dt 100 A/ s, VDD VDSS 5 V/ns Silicon chip on Direct-Copper-Bond TJ 150 C,