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VCES = 1200V GenX3TM 1200V IGBT IXGH30N120B3D1 IC110 = 30A IXGT30N120B3D1 VCE(sat) 3.5V tfi(typ) = 204ns High speed Low Vsat PT IGBTs 3-20 kHz switching Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V VGEM Transient 30 V G IC110 TC = 110 C30 A C C (TAB) E IF110 TC = 110 C28 A ICM TC = 25 C, 1ms 150 A TO-268 (IXGT) SSOA VGE = 15V, TVJ = 125 C, RG = 5 ICM = 60 A (RBSOA) Clamped inductive load @ 0.8 VCE PC TC = 25 C 300 W G TJ -55 ... +150 C E C (TAB) TJM 150 C G = Gate C = Collector Tstg -55 ... +150 C E = Emitter TAB = Collector Md Mounting torque (TO-247) 1.13 / 10 Nm/lb.in. TL Maximum lead temperature for soldering 300 C TSOLD 1.6mm (0.062 in.) from case for 10s 260 C Features Weight TO-247