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Preliminary Technical Information High-Gain IGBT VCES = 600V IXGH30N60B4 IC110 = 30A VCE(sat) 1.7V tfi(typ) = 88ns Medium-Speed PT Trench IGBT TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V G VGES Continuous 20 V C Tab E VGEM Transient 30 V IC25 TC = 25 C 66 A G = Gate C = Collector IC110 TC = 110 C 30 A E = Emitter Tab = Collector ICM TC = 25 C, 1ms 156 A SSOA VGE = 15V, TVJ = 125 C, RG = 10 ICM = 48 A (RBSOA) Clamped Inductive Load @ VCES Features PC TC = 25 C 190 W Optimized for Low Conduction and TJ -55 ... +150 C Switching Losses TJM 150 C Square RBSOA Tstg -55 ... +150 C International Standard Package TL Maximum Lead Temperature for Soldering 300 C TSOLD 1.6 mm (0.062in.) from Case for 10s 260 C Advantages

 

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 ixgh30n60b4.pdf Проектирование, MOSFET, Мощность

 ixgh30n60b4.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 ixgh30n60b4.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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