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HiPerFASTTM IGBT IXGH 30N60BU1 VCES = 600 V IXGT 30N60BU1 IC25 = 60 A with Diode VCE(sat) = 1.8 V Combi Pack tfi = 100 ns TO-268 (IXGT) G Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 150 C 600 V C (TAB) VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V TO-247 AD VGEM Transient 30 V IC25 TC = 25 C60 A C (TAB) IC110 TC = 110 C30 A G ICM TC = 25 C, 1 ms 120 A C E SSOA VGE = 15 V, TVJ = 125 C, RG = 33 ICM = 60 A G = Gate, C = Collector, (RBSOA) Clamped inductive load, L = 100 H @ 0.8 VCES E = Emitter, TAB = Collector PC TC = 25 C 200 W Features TJ -55 ... +150 C International standard packages TJM 150 C JEDEC TO-247 SMD surface Tstg -55 ... +150 C mountable and JEDEC TO-247 AD High frequency IGBT and antiparallel Maximum Lead and Tab temperature for soldering 300 C 1.6 mm (0.062 in.) from case