Скачать даташит для ixgh30n60c2_ixgt30n60c2:

VCES = 600 V IXGH 30N60C2 HiPerFASTTM IGBT IC25 = 70 A IXGT 30N60C2 VCE(sat) = 2.7 V C2-Class High Speed IGBTs tfi typ = 32 ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V G E C (TAB) VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C (limited by leads) 70 A TO-247 (IXGH) IC110 TC = 110 C30 A ICM TC = 25 C, 1 ms 150 A SSOA VGE = 15 V, TVJ = 125 C, RG = 10 ICM = 60 A C (TAB) G (RBSOA) Clamped inductive load @ 600 V C E PC TC = 25 C 190 W G = Gate, C = Collector, TJ -55 ... +150 C E = Emitter, TAB = Collector TJM 150 C Tstg -55 ... +150 C Features Maximum lead temperature for soldering 300 C 1.6 mm (0.062 in.) from case for 10 s Very high frequency IGBT Plastic body for 10s 250 C Square RBSOA Md Mounting torque (M3) (TO-247)