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GenX3TM 600V IGBTs VCES = 600V IXGH30N60C3D1 w/ Diode IC110 = 30A IXGT30N60C3D1 VCE(sat) 3.0V tfi(typ) = 47ns High-Speed PT IGBTs for 40-100 kHz Switching TO-268 (IXGT) Symbol Test Conditions Maximum Ratings G VCES TC = 25 C to 150 C 600 V E VCGR TJ = 25 C to 150 C, RGE = 1M 600 V C (Tab) VGES Continuous 20 V VGEM Transient 30 V TO-247 (IXGH) IC25 TC = 25 C 60 A IC110 TC = 110 C 30 A IF110 TC = 110 C 30 A ICM TC = 25 C, 1ms 150 A G SSOA VGE = 15V, TVJ = 125 C, RG = 5 ICM = 60 A C C (Tab) E (RBSOA) Clamped Inductive Load @ VCES PC TC = 25 C 220 W G = Gate C = Collector E = Emitter Tab = Collector TJ -55 ... +150 C TJM 150 C Tstg -55 ... +150 C TL 1.6mm (0.062 in.) from Case for 10s 300 C Features TSOLD Plastic Body for 10 seconds 260 C Md Mounting Torque (TO-247) 1.13/10 Nm/lb.in. Optimiz