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GenX3TM 1200V VCES = 1200V IXGH32N120A3 IGBTs IC110 = 32A IXGT32N120A3 VCE(sat) 2.35V Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching TO-268 (IXGT) Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 1200 V E VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V C (Tab) VGES Continuous 20 V TO-247 (IXGH) VGEM Transient 30 V IC25 TC = 25 C 75 A IC110 TC = 110 C 32 A ICM TC = 25 C, 1ms 230 A G IA TC = 25 C 20 A C C (Tab) E EAS TC = 25 C 120 mJ SSOA VGE= 15V, TJ = 125 C, RG = 20 ICM = 150 A G = Gate C = Collector (RBSOA) Clamped Inductive Load VCE 0.8 VCES E = Emitter Tab = Collector PC TC = 25 C 300 W TJ -55 ... +150 C TJM 150 C Tstg -55 ... +150 C Features TL 1.6mm (0.063in) from Case for 10s 300 C Optimized for Low Conduction Losses TSOLD Plastic Body for 10s 260