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IXGH 32N60A IXGH 32N60AS VCES = 600 V IC25 = 60 A HiPerFASTTM IGBT VCE(sat) = 2.9 V tfi = 125 ns TO-247 SMD (32N60AS) Symbol Test Conditions Maximum Ratings C (TAB) VCES TJ = 25 C to 150 C 600 V G E VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V TO-247 AD VGEM Transient 30 V IC25 TC = 25 C60 A IC90 TC = 90 C32 A C (TAB) G ICM TC = 25 C, 1 ms 120 A C E SSOA VGE= 15 V, TVJ = 125 C, RG = 33 ICM = 64 A G = Gate C = Collector (RBSOA) Clamped inductive load, L = 100 H @ 0.8 VCES E = Emitter TAB = Collector PC TC = 25 C 200 W TJ -55 ... +150 C TJM 150 C Features Tstg -55 ... +150 C International standard packages JEDEC TO-247 SMD surface Maximum lead temperature for soldering 300 C mountable and JEDEC TO-247 AD 1.6 mm (0.062 in.) from case for 10 s High current handling capability Md Mounting torque (M3) 1.1

 

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 ixgh32n60a.pdf Проектирование, MOSFET, Мощность

 ixgh32n60a.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 ixgh32n60a.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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