Скачать даташит для ixgh32n90b2:

Advance Technical Information IXGH 32N90B2 VCES = 900 V HiPerFASTTM IGBT IXGT 32N90B2 IC25 = 64 A B2-Class High Speed IGBTs VCE(sat) = 2.7 V tfi typ = 150 ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 900 V VCGR TJ = 25 C to 150 C; RGE = 1 M 900 V C (TAB) VGES Continuous 20 V G VGEM Transient 30 V C E IC25 TC = 25 C (limited by leads) 64 A TO-268 (IXGT) IC110 TC = 110 C32 A ICM TC = 25 C, 1 ms 200 A SSOA VGE = 15 V, TVJ = 125 C, RG = 10 ICM = 64 A G C (TAB) E (RBSOA) Clamped inductive load @ 600V PC TC = 25 C 300 W G = Gate, C = Collector, TJ -55 ... +150 C E = Emitter, TAB = Collector TJM 150 C Tstg -55 ... +150 C Features Maximum lead temperature for soldering 300 C High frequency IGBT 1.6 mm (0.062 in.) from case for 10 s High current handling capability Plastic body for 10 s 260