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Preliminary Technical Information VCES = 600V GenX3TM 600V IGBT IXGH36N60A3D4 with Diode IC110 = 36A VCE(sat) 1.4V Ultra Low Vsat PT IGBT for up to 5kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V G VGEM Transient 30 V C (TAB) E IC110 TC = 110 C 36 A IF110 TC = 110 C 10 A G = Gate C = Collector ICM TC = 25 C, 1ms 200 A E = Emitter TAB = Collector SSOA VGE = 15V, TVJ = 125 C, RG = 5 ICM = 60 A (RBSOA) Clamped inductive load @ 600V Features PC TC = 25 C 220 W TJ -55 ... +150 C Optimized for low conduction losses Square RBSOA TJM 150 C Anti-parallel ultra fast diode Tstg -55 ... +150 C International standard package TL 1.6mm (0.062 in.) from case for 10s 300 C Advantages TSOLD P