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VCES = 600V GenX3TM 600V IGBT IXGH36N60B3D4 IC110 = 36A VCE(sat) 1.8V Medium speed low Vsat PT IGBT for 5-40kHz switching TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V G TAB C VGEM Transient 30 V E IC110 TC = 110 C 36 A IF110 TC = 110 C 10 A ICM TC = 25 C, 1ms 200 A G = Gate C = Collector SSOA VGE= 15V, TJ = 125 C, RG = 5 ICM = 80 A E = Emitter TAB = Collector (RBSOA) Clamped inductive load @VCE 600V PC TC = 25 C 250 W Features TJ -55 ... +150 C TJM 150 C Optimized for low conduction and Tstg -55 ... +150 C switching losses Md Mounting torque 1.13/10 Nm/lb.in. Square RBSOA Anti-parallel ultra fast diode TL Maximum lead temperature for soldering 300 C International s
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ixgh36n60b3d4.pdf Проектирование, MOSFET, Мощность
ixgh36n60b3d4.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник
ixgh36n60b3d4.pdf База данных, Инновации, ИМС, Транзисторы
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