Справочник транзисторов

 

Скачать даташит для ixtk102n30p:

ixtk102n30pixtk102n30p

VDSS = 300 V IXTK 102N30P PolarHTTM ID25 = 102 A Power MOSFET RDS(on) 33 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-264 (IXTK) VDSS TJ = 25 C to 150 C 300 V VDGR TJ = 25 C to 150 C; RGS = 1 M 300 V VGSS Continuous 20 V VGSM Transient 30 V G ID25 TC = 25 C 102 A D (TAB) S ID(RMS) External lead current limit 75 A IDM TC = 25 C, pulse width limited by TJM 250 A IAR TC = 25 C60 A G = Gate D = Drain S = Source TAB = Drain EAR TC = 25 C60 mJ EAS TC = 25 C 2.5 J dv/dt IS IDM, di/dt 100 A/ s, VDD VDSS, 10 V/ns Features TJ 150 C, RG = 4 l International standard package PD TC = 25 C 700 W l Unclamped Inductive Switching (UIS) TJ -55 ... +150 C rated TJM 150 C l Low package inductance Tstg -55 ... +150 C - easy to drive

 

Ключевые слова - ALL TRANSISTORS DATASHEET

 ixtk102n30p.pdf Проектирование, MOSFET, Мощность

 ixtk102n30p.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 ixtk102n30p.pdf База данных, Инновации, ИМС, Транзисторы

 

 

 


 
↑ Back to Top
.