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IXTK 150N15P PolarHTTM VDSS = 150 V IXTQ 150N15P Power MOSFET ID25 = 150 A RDS(on) 13 m N-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 150 V VDGR TJ = 25 C to 175 C; RGS = 1 M 150 V G D (TAB) VGS Continuous 20 V D S VGSM Transient 30 V ID25 TC = 25 C 150 A TO-3P (IXTQ) ID(RMS) External lead current limit 75 A IDM TC = 25 C, pulse width limited by TJM 340 A IAR TC = 25 C60 A EAR TC = 25 C80 mJ G D (TAB) S EAS TC = 25 C 2.5 J dv/dt IS IDM, di/dt 100 A/ s, VDD VDSS, 10 V/ns G = Gate D = Drain TJ 175 C, RG = 4 S = Source TAB = Drain PD TC = 25 C 714 W TJ -55 ... +175 C TJM 175 C Features Tstg -55 ... +175 C l International standard packages l TL 1.6 mm (0.062 in.) from case for 10 s 300