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Advance Technical Information XPTTM 650V IGBT VCES = 650V IXXH110N65C4 GenX4TM IC110 = 110A VCE(sat) 2.35V Extreme Light Punch Through tfi(typ) = 30ns IGBT for 20-60 kHz Switching Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, RGE = 1M 650 V VGES Continuous 20 V VGEM Transient 30 V G C Tab IC25 TC = 25 C (Chip Capability) 234 A E ILRMS Terminal Current Limit 160 A IC110 TC = 110 C 110 A G = Gate C = Collector ICM TC = 25 C, 1ms 470 A E = Emitter Tab = Collector SSOA VGE = 15V, TVJ = 150 C, RG = 2 ICM = 220 A (RBSOA) Clamped Inductive Load @VCE VCES tsc VGE= 15V, VCE = 360V, TJ = 150 C 10 s Features (SCSOA) RG = 10 , Non Repetitive PC TC = 25 C 880 W Optimized for 20-60kHz Switching Square RBSOA TJ -55 ... +175 C Avalanche Capability