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VCES = 650V XPTTM 650V GenX4TM IXXN110N65B4H1 IC110 = 110A w/ Sonic Diode VCE(sat) 2.1V tfi(typ) = 85ns Extreme Light Punch Through IGBT for 10-30kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 175 C 650 V G VCGR TJ = 25 C to 175 C, RGE = 1M 650 V VGES Continuous 20 V VGEM Transient 30 V E IC25 TC = 25 C (Chip Capability) 215 A C IC25 Terminal Current Limit 200 A IC110 TC = 110 C 110 A G = Gate, C = Collector, E = Emitter IF110 TC = 110 C 70 A either emitter terminal can be used as Main or Kelvin Emitter ICM TC = 25 C, 1ms 730 A SSOA VGE = 15V, TVJ = 150 C, RG = 2 ICM = 220 A Features (RBSOA) Clamped Inductive Load @VCE VCES tsc VGE = 15V, VCE = 360V, TJ = 150 C 10 s International Stan