Скачать даташит для ixxn110n65c4h1:

VCES = 650V XPTTM 650V GenX4TM IXXN110N65C4H1 IC110 = 110A w/ Sonic Diode VCE(sat) 2.35V tfi(typ) = 30ns Extreme Light Punch Through IGBT for 20-60kHz Switching E SOT-227B, miniBLOC E153432 E Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, RGE = 1M 650 V VGES Continuous 20 V E VGEM Transient 30 V C IC25 TC = 25 C (Chip Capability) 210 A IC25 Terminal Current Limit 200 A G = Gate, C = Collector, E = Emitter IC110 TC = 110 C 110 A either emitter terminal can be used as Main or Kelvin Emitter IF110 TC = 110 C 70 A ICM TC = 25 C, 1ms 470 A Features SSOA VGE = 15V, TVJ = 150 C, RG = 2 ICM = 220 A (RBSOA) Clamped Inductive Load @VCE VCES International Standard Package tsc VGE = 15V, VCE = 360V, T