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VCES = 650V XPTTM 650V GenX4TM IXXR110N65B4H1 IC110 = 70A w/ Sonic Diode VCE(sat) 2.20V (Electrically Isolated Tab) tfi(typ) = 85ns Extreme Light Punch Through IGBT for 10-30kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, RGE = 1M 650 V G C VGES Continuous 20 V Isolated Tab E VGEM Transient 30 V IC25 TC = 25 C (Chip Capability) 150 A G = Gate C = Collector IC110 TC = 110 C 70 A E = Emitter IF110 TC = 110 C 48 A ICM TC = 25 C, 1ms 460 A SSOA VGE = 15V, TVJ = 150 C, RG = 2 ICM = 220 A (RBSOA) Clamped Inductive Load @VCE VCES Features tsc VGE = 15V, VCE = 360V, TJ = 150 C 10 s (SCSOA) RG = 82 , Non Repetitive Silicon Chip on Direct-Copper Bond PC TC = 25 C 455 W (DCB) Substrate Isolated Mounting Surface TJ -55 ... +175 C