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Preliminary Technical Information XPTTM 650V IGBT VCES = 650V IXYP10N65C3 GenX3TM IC110 = 10A VCE(sat) 2.50V tfi(typ) = 23ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-220 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, RGE = 1M 650 V G C Tab VGES Continuous 20 V E VGEM Transient 30 V IC25 TC = 25 C 30 A G = Gate C = Collector IC110 TC = 110 C 10 A E = Emitter Tab = Collector ICM TC = 25 C, 1ms 54 A IA TC = 25 C 5 A EAS TC = 25 C 50 mJ Features SSOA VGE = 15V, TVJ = 150 C, RG = 50 ICM = 20 A Optimized for 20-60kHz Switching (RBSOA) Clamped Inductive Load @VCE VCES Square RBSOA tsc VGE = 15V, VCE = 360V, TJ = 150 C 8 s Avalanche Rated (SCSOA) RG = 150 , Non Repetitive Short Ci