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Preliminary Technical Information XPTTM 650V IGBT VCES = 650V IXYP10N65C3D1M GenX3TM w/Diode IC110 = 7A VCE(sat) 2.6V (Electrically Isolated Tab) tfi(typ) = 23ns Extreme Light Punch Through IGBT for 20-60kHz Switching OVERMOLDED TO-220 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, RGE = 1M 650 V GC Isolated Tab E VGES Continuous 20 V VGEM Transient 30 V G = Gate C = Collector IC25 TC = 25 C 15 A E = Emitter IC110 TC = 110 C 7 A IF110 TC = 110 C 13 A ICM TC = 25 C, 1ms 50 A IA TC = 25 C 5 A Features EAS TC = 25 C 100 mJ SSOA VGE = 15V, TVJ = 150 C, RG = 50 ICM = 20 A Optimized for 20-60kHz Switching Plastic Overmolded Tab for Electrical (RBSOA) Clamped Inductive Load @VCE VCES Isolation tsc VGE =