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Preliminary Technical Information High Voltage, High Gain VCES = 3000V MMIX4B20N300 BIMOSFETTM Monolithic IC110 = 14A Bipolar MOS Transistor C2 C1 VCE(sat) 3.2V G1 G2 E2C4 E1C3 (Electrically Isolated Tab) G3 G4 C2 E3E4 G2 E2C4 G4 E3E4 C1 Symbol Test Conditions Maximum Ratings G1 VCES TC = 25 C to 150 C 3000 V E1C3 VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V G3 VGES Continuous 20 V Isolated Tab E3E4 VGEM Transient 30 V G4 E2C4 IC25 TC = 25 C 34 A G2 IC110 TC = 110 C 14 A C2 G3 ICM TC = 25 C, VGE = 19V, 1ms 150 A E1C3 10ms 74 A G1 SSOA VGE = 15V, TVJ = 125 C, RG = 20 ICM = 130 A C1 (RBSOA) Clamped Inductive Load 1500 V G = Gate E = Emitter PC TC = 25 C 150 W C = Collector TJ -55 ... +150 C TJM C 150 Tstg -55 ... +150 C Features TL 1.6mm (0.062 in.) from Case for 10s 300 C TSOLD