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Advance Technical Information High Voltage, High Gain VCES = 3000V MMIX4B22N300 BIMOSFETTM Monolithic IC90 = 22A Bipolar MOS Transistor C2 C1 VCE(sat) 2.7V G1 G2 E2C4 E1C3 (Electrically Isolated Tab) G3 G4 C2 E3E4 G2 E2C4 Symbol Test Conditions Maximum Ratings G4 E3E4 C1 VCES TJ = 25 C to 150 C 3000 V G1 VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V E1C3 VGES Continuous 20 V G3 VGEM Transient 30 V Isolated Tab E3E4 IC25 TC = 25 C 38 A G4 E2C4 IC90 TC = 90 C 22 A G2 ICM TC = 25 C, 1ms 165 A C2 G3 SSOA VGE = 15V, TVJ = 125 C, RG = 15 ICM = 180 A E1C3 (RBSOA) Clamped Inductive Load VCES 1500 V G1 TSC VGE = 15V, TJ = 125 C, C1 (SCSOA) RG = 52 , VCE = 1500V, Non-Repetitive 10 s G = Gate E = Emitter PC TC = 25 C 150 W C = Collector TJ -55 ... +15