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2n4898_2n4899_2n49002n4898_2n4899_2n4900

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N4898 2N4899 2N4900 DESCRIPTION With TO-66 package Low collector-emitter saturation voltage Excellent safe operating area 2N4900 complement to type 2N4912 APPLICATIONS Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2N4898 40 VCBO Collector-base voltage 2N4899 Open emitter 60 V 2N4900 80 2N4898 40 VCEO Collector-emitter voltage 2N4899 Open base 60 V 2N4900 80 VEBO Emitter-base voltage Open collector 5 V IC Collector current 1.0 A ICM Collector current-peak 4.0 A IB Base current 1.0 A PD Total Power Dissipation TC=25 25 W Tj Junction temperature 150 Tstg Storage tem

 

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