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SEMICONDUCTOR 2N2906E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES 1 6 DIM MILLIMETERS Low Leakage Current _ A 1.6 + 0.05 _ A1 1.0 + 0.05 ICEX=-50nA(Max.), IBL=-50nA(Max.) 2 5 _ B 1.6 + 0.05 _ B1 1.2 + 0.05 @VCE=-30V, VEB=-3V. C 0.50 3 4 Excellent DC Current Gain Linearity. _ D 0.2 + 0.05 _ H 0.5 + 0.05 Low Saturation Voltage _ J 0.12 + 0.05 P P VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. P 5 Low Collector Output Capacitance Cob=4.5pF(Max.) @VCB=5V. 1. Q1 EMITTER 2. Q1 BASE 3. Q2 COLLECTOR 4. Q2 EMITTER 5. Q2 BASE 6. Q1 COLLECTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT TES6 VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V EQUIVALENT CIRCUIT (TOP VIEW) IC Collector Current -200 mA IB Base Curr