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SEMICONDUCTOR BD139 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A B D C FEATURES E High Current. (Max. 1.5A) F DC Current Gain hFE=40Min. @IC=0.15A Complementary to BD140. G H DIM MILLIMETERS J A 8.3 MAX K B 5.8 L C 0.7 _ + D 3.2 0.1 MAXIMUM RATING (Ta=25 ) E 3.5 _ + F 11.0 0.3 CHARACTERISTIC SYMBOL RATING UNIT G 2.9 MAX M H 1.0 MAX J 1.9 MAX VCBO Collector-Base Voltage 100 V O + _ K 0.75 0.15 N P _ + L 15.5 0.5 1 2 3 VCEO Collector-Emitter Voltage 80 V _ + M 2.3 0.1 _ + N 0.65 0.15 VEBO Emitter-Base Voltage 5 V O 1.6 1. EMITTER P 3.4 MAX 2. COLLECTOR IC Collector Current 1.5 A 3. BASE IB Base Current 0.5 A 1.25 Ta=25 Collector Power TO-126 PC W Dissipation 10 Tc=25 Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CH