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SEMICONDUCTOR KGT15N120KDA TECHNICAL DATA General Description KEC NPT Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. FEATURES High speed switching High system efficiency Short Circuit Withstand Times 10us Extremely enhanced avalanche capability MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCES Collector-Emitter Voltage 1200 V VGES 20 Gate-Emitter Voltage V @TC=25 30 A IC Collector Current @TC=100 15 A ICM* Pulsed Collector Current 45 A Diode Continuous Forward Current @TC=100 IF 15 A IFM Diode Maximum Forward Current 45 A @TC=25 200 W PD Maximum Power Dissipation @TC=100 80 W Tj Maximum Junction Temperature 150 Tstg -55 to + 150 Storage Temperature