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SMD Type MOSFET N-Channel Enhancement MOSFET 2N7002 SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 Features 3 High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable 1 2 High saturation current capability +0.02 +0.1 0.15 -0.02 0.95-0.1 +0.1 1.9-0.2 1.Base 1 GATE 2.Emitter 2 SOURCE 3.collector 3 DRAIN Absolute Maximum Ratings Ta=25 Parameter Symbol Rating Unit Drain-Source voltage VDS 60 V Drain Current ID 115 mA Power Dissipation PD 225 mW Junction Temperature TJ 150 Storage Temperature Tstg -55 to 150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditions Min Typ Max Unit Drain-source breakdown voltage VDSS VGS=0 V, ID=10 0 A 60 V Zero gate voltage drain current IDSS VDS=60 V, VGS=0 V 80 nA Gate-body leakage lGSS VDS=0 V, VGS= 25 V 80 nA Gate-threshold voltage VGS(th) VDS=VGS, ID=250