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SMD Type Transistors NPN General Purpose Transistor 2PD601AW Features High collector current (max. 100 mA) Low collector-emitter saturation voltage (max. 500 mV). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 6V Collector current IC 100 mA Peak collector current ICM 200 mA Total power dissipation Ptot 200 mW Storage temperature Tstg -65 to +150 Junction temperature Tj 150 Operating ambient temperature Tamb -65 to +150 Thermal resistance from junction to ambient Rth j-a 625 K/W 1 www.kexin.com.cn SMD Type Transistors 2PD601AW Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cut-off current ICBO IE =0; VCB =60V 10 nA IE =0; VCB =60V; Tj =150 5 A Emitter cut-off current IEBO