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DIP Type Transistors PNP Tr ansistors 2SB772 TO-126 Unit mm 8.00 0.30 3.25 0.20 Features PNP transistor High current output up to 3A Low Saturation Voltage 3.20 0.10 Complement to 2SD882 (1.00) (0.50) 0.75 0.10 1.75 0.20 1.60 0.10 0.75 0.10 1 2 3 #1 +0.10 2.28TYP 2.28TYP 0.50 0.05 [2.28 0.20] [2.28 0.20] 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to Base Voltage VCBO -40 V Collector to Emitter Voltage VCEO -30 V Emitter to Base Voltage VEBO -6 V Collector Current to Continuous IC -3 A Collector Dissipation Pc 1 W Junction Temperature TJ 150 Storage Temperature Tstg -55 to 150 Electrical Characteristics Ta = 25 Parameter Symbol Test Conditions Min Typ Max Unit Collector-base breakdown voltage VCBO Ic=-100uA ,IE=0 -40 V Collector